Title :
Quasi-static/cyclic loading tests of nanometric SiO2 wires using AFM technique for NEMS designs
Author :
Namazu, Takahiro ; Isono, Yoshitada
Author_Institution :
Fac. of Eng., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
This research carried out intermediate temperature quasi-static/cyclic loading tests of nanometric silicon dioxide wires (SiO2 nano-wires) using AFM, for revealing specimen size and temperature effects on mechanical properties and fatigue lives of the wires. Four kinds of the SiO2 nano-wires with widths from 230 nm to 800 nm were prepared by a thermal oxidation of nanometric single crystal silicon wires (SCS nano-wires). Quasi-static bending tests using AFM examined Young´s modulus, fracture stress and strain of the wires at temperatures ranging from 295 K to 573 K in high vacuum. All of the SiO2 nano-wires fractured in a brittle manner at the test temperatures. Young´s moduli of the nano-wires agreed with that of bulk silica, which showed that the modulus had no specimen size effect. However, fracture stress and strain of the SiO2 nano-wires changed with not only temperature but also specimen size. Cyclic bending tests in AFM using the 230 nm- and 410 nm-wide SiO2 wires investigated high cycle fatigue lives of the wires at room temperature. The number of cycles to failure of the 230 nm-wide wires was slightly larger than that of the 410 nm-wide wires at the loading frequency of 50 Hz and 450 Hz. This is suggestive of existing of the specimen size effect on the fatigue lives of the SiO2 nano-wires.
Keywords :
Young´s modulus; atomic force microscopy; bending; brittle fracture; fatigue testing; fracture mechanics; nanotechnology; nanowires; oxidation; silicon compounds; 230 to 800 nm; 295 to 573 K; 450 Hz; 50 Hz; AFM technique; NEMS designs; Si; SiO2; Youngs modulus; bending tests; brittle fracture; cyclic bending tests; failure; fatigue; fracture strain; fracture stress; loading frequency; mechanical properties; nanometric SiO2 wires; nanometric silicon dioxide wires; nanometric single crystal silicon wires; quasi-static/cyclic loading tests; specimen size; temperature effects; thermal oxidation; Capacitive sensors; Fatigue; Frequency; Mechanical factors; Oxidation; Silicon compounds; Temperature distribution; Testing; Thermal stresses; Wires;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032122