Title :
Room-temperature two-terminal characteristics in silicon nano wires
Author :
Hu, S.F. ; Wong, W.Z. ; Liu, S.S. ; Wu, Y.G. ; Sung, C.L. ; Huang, T.Y. ; Sze, S.M.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.
Keywords :
Coulomb blockade; electrical resistivity; electron beam lithography; elemental semiconductors; nanolithography; nanowires; one-dimensional conductivity; oxidation; silicon; silicon-on-insulator; 20 C; 29 nm; 3 nm; Coulomb blockade; Si-SiO2; e-beam lithography; electrical transport; one-dimensional carrier confinement; oxidation; quantum effects; room temperature; room-temperature current-voltage characteristics; silicon nanowires; thickness; thin-silicon-on-insulator wires; two-terminal characteristics; width; zero current state; Carrier confinement; Electric variables measurement; Electrons; Laboratories; Oxidation; Quantization; Silicon; Temperature; Wires; Writing;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032123
