Title :
Fabrication of site-controlled, highly uniform, and dense InGaN quantum dots
Author :
Lee, L.K. ; Jung, Taeil ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
We report fabrication of site-controlled, highly uniform and dense (>=1e10/cm2) InGaN multiple stacks of quantum dots using selective area epitaxy in MOCVD. The dot height and lateral dimension are 3 nm and 30 nm, respectively.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; semiconductor quantum dots; wide band gap semiconductors; InGaN; MOCVD; dense quantum dots; selective area epitaxy; site-controlled quantum dots; Epitaxial growth; Gallium nitride; MOCVD; Magnetic materials; Numerical analysis; Optical device fabrication; Quantum computing; Quantum dots; Resists; Size control; (220.4241) Nanostructure fabrication; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
