• DocumentCode
    2243580
  • Title

    A dual-band UV and IR quantum cascade photodetector

  • Author

    Rostami, A. ; Khosravi, S. ; Saghai, H.Rasooli

  • Author_Institution
    Sch. of Eng. Emerging-Technol., Univ. of Tabriz, Tabriz, Iran
  • fYear
    2011
  • fDate
    13-16 Nov. 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We have proposed a new dual band quantum cascade photodetector with ability of detecting UV and IR through two independent paths. Because of large band gap of GaN and AlGaN, we have used AlxGa1-xN/AlN quantum wells. For detecting of IR and UV intersubband and interband transitions have been used respectively. For IR and UV path we have achieved peak of Responsivity about 60 mA/W at 2.7 um and 25 mA/W at 245 nm at 300K respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum wells; ultraviolet detectors; wide band gap semiconductors; AlxGa1-xN-AlN; IR quantum cascade photodetector; dual-band UV photodetector; interband transitions; quantum wells; temperature 300 K; wavelength 2.7 mum; wavelength 245 nm; Abstracts; Gratings; Substrates; AlxGa1−xN/AlN quantum wells; Dual-color; quantum cascade structures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
  • Conference_Location
    Shanghai
  • ISSN
    2162-108X
  • Print_ISBN
    978-0-8194-8961-6
  • Type

    conf

  • DOI
    10.1117/12.904399
  • Filename
    6210682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243580