Title :
A dual-band UV and IR quantum cascade photodetector
Author :
Rostami, A. ; Khosravi, S. ; Saghai, H.Rasooli
Author_Institution :
Sch. of Eng. Emerging-Technol., Univ. of Tabriz, Tabriz, Iran
Abstract :
We have proposed a new dual band quantum cascade photodetector with ability of detecting UV and IR through two independent paths. Because of large band gap of GaN and AlGaN, we have used AlxGa1-xN/AlN quantum wells. For detecting of IR and UV intersubband and interband transitions have been used respectively. For IR and UV path we have achieved peak of Responsivity about 60 mA/W at 2.7 um and 25 mA/W at 245 nm at 300K respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum wells; ultraviolet detectors; wide band gap semiconductors; AlxGa1-xN-AlN; IR quantum cascade photodetector; dual-band UV photodetector; interband transitions; quantum wells; temperature 300 K; wavelength 2.7 mum; wavelength 245 nm; Abstracts; Gratings; Substrates; AlxGa1−xN/AlN quantum wells; Dual-color; quantum cascade structures;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6
