Title :
An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment
Author :
Rofail, S.S. ; Yeo, K.S. ; Chew, K.W. ; Zhou, X. ; Tang, T.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
This paper presents an experimentally-based model that can accurately describe the hybrid-mode operation of deep submicron LDD p-MOSFETs in a circuit environment. Unified equations for the MOS, bipolar, and space charge currents of the Bi-MOS structure were derived and later adapted to meet the circuit simulation requirements
Keywords :
BIMOS integrated circuits; circuit analysis computing; integrated circuit modelling; space charge; Bi-MOS structure; DC model; MOS currents; XSIM model; bipolar currents; circuit simulation environment; deep submicron LDD p-MOSFET; experimentally-based model; hybrid-mode operation; space charge currents; Analytical models; Circuit simulation; Energy states; Equations; MOS devices; MOSFET circuits; Predictive models; SPICE; Space charge; Space technology;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.682544
