• DocumentCode
    2243637
  • Title

    An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment

  • Author

    Rofail, S.S. ; Yeo, K.S. ; Chew, K.W. ; Zhou, X. ; Tang, T.W.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    1
  • fYear
    1998
  • fDate
    24-28 May 1998
  • Firstpage
    37
  • Abstract
    This paper presents an experimentally-based model that can accurately describe the hybrid-mode operation of deep submicron LDD p-MOSFETs in a circuit environment. Unified equations for the MOS, bipolar, and space charge currents of the Bi-MOS structure were derived and later adapted to meet the circuit simulation requirements
  • Keywords
    BIMOS integrated circuits; circuit analysis computing; integrated circuit modelling; space charge; Bi-MOS structure; DC model; MOS currents; XSIM model; bipolar currents; circuit simulation environment; deep submicron LDD p-MOSFET; experimentally-based model; hybrid-mode operation; space charge currents; Analytical models; Circuit simulation; Energy states; Equations; MOS devices; MOSFET circuits; Predictive models; SPICE; Space charge; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
  • Conference_Location
    Waterloo, Ont.
  • ISSN
    0840-7789
  • Print_ISBN
    0-7803-4314-X
  • Type

    conf

  • DOI
    10.1109/CCECE.1998.682544
  • Filename
    682544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243637