• DocumentCode
    2243641
  • Title

    A comparison between BIMOS device types

  • Author

    Adler, M.

  • Author_Institution
    General Electric Corporate, Schenectady, NY 12345
  • fYear
    1982
  • fDate
    14-17 June 1982
  • Firstpage
    371
  • Lastpage
    377
  • Abstract
    This paper deals with the comparison of three types of BIMOS transistors (cascade, cascode, and parallel combinations of MOSFET and bipolar transistors). The first section of the paper presents device I-V relations for the cascade (Darlington) combination for devices rated between 80V and 700V. The second section of the paper deals with the comparison of all three BIMOS device types together with the discrete MOS and bipolar transistors. The comparison is based on the maximum current density limited by keeping the power dissipation to under lOOW/cm2. Included in this analysis are losses due to conduction as well as switching.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; Current density; MOSFET; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists conference, 1982 IEEE
  • Conference_Location
    Cambridge, MA, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1982.7072431
  • Filename
    7072431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243641