DocumentCode
2243659
Title
Investigating high-speed modulation characteristics of quantum dots in red emitting quantum dot-light emitting diodes
Author
Zhang, Fan ; Zhang, Chunfeng ; Tan, Zhanao ; Zhu, Ting ; Xu, Jian
Author_Institution
Dept. of Eng. Sci. & Mech., Penn state Univ., State College, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We investigate the high-speed modulation characteristics of quantum dots in red emitting quantum dot-light emitting diodes, in which the -3dB cutoff frequency for 6-mm2 device is 1.5 MHz under optimized conditions. The introduction of a positive offset DC bias voltage greatly increases the modulation speed at low applied voltage range.
Keywords
II-VI semiconductors; cadmium compounds; electro-optical modulation; high-speed optical techniques; light emitting diodes; semiconductor quantum dots; zinc compounds; CdSe-CdZnS; frequency 1.5 MHz; high-speed modulation characteristics; positive offset DC bias voltage; quantum dot; red emitting quantum dot-light emitting diodes; Cutoff frequency; Fluorescence; Indium tin oxide; Light emitting diodes; Low voltage; Nanocrystals; Optical fiber communication; Quantum dots; Quantum mechanics; Substrates;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571771
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