DocumentCode :
2243671
Title :
A new, high speed, unique switch
Author :
Hsu, Poh
Author_Institution :
Massachusetts Institute of Technology
fYear :
1982
fDate :
14-17 June 1982
Firstpage :
378
Lastpage :
382
Abstract :
An effort was made to devise a new semiconductor switch which has the switching speed of the emitter-open switching, but only requires a standard base drive configuration (see figure 1 for my definition of standard base drive). The result of the research is a new semiconductor switch which achieves higher switching speed than emitter-open switching, lower forward voltage drop (particularly for very high current applications, involving hundreds of amperes), considerably lower cost, and uses more readily available parts. It is free from reverse biased secondary breakdown, a predominant mode of failure of many semiconductor switches.
Keywords :
Bipolar transistors; Electric breakdown; Schottky diodes; Standards; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists conference, 1982 IEEE
Conference_Location :
Cambridge, MA, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1982.7072432
Filename :
7072432
Link To Document :
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