• DocumentCode
    2243671
  • Title

    A new, high speed, unique switch

  • Author

    Hsu, Poh

  • Author_Institution
    Massachusetts Institute of Technology
  • fYear
    1982
  • fDate
    14-17 June 1982
  • Firstpage
    378
  • Lastpage
    382
  • Abstract
    An effort was made to devise a new semiconductor switch which has the switching speed of the emitter-open switching, but only requires a standard base drive configuration (see figure 1 for my definition of standard base drive). The result of the research is a new semiconductor switch which achieves higher switching speed than emitter-open switching, lower forward voltage drop (particularly for very high current applications, involving hundreds of amperes), considerably lower cost, and uses more readily available parts. It is free from reverse biased secondary breakdown, a predominant mode of failure of many semiconductor switches.
  • Keywords
    Bipolar transistors; Electric breakdown; Schottky diodes; Standards; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists conference, 1982 IEEE
  • Conference_Location
    Cambridge, MA, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1982.7072432
  • Filename
    7072432