DocumentCode
2243671
Title
A new, high speed, unique switch
Author
Hsu, Poh
Author_Institution
Massachusetts Institute of Technology
fYear
1982
fDate
14-17 June 1982
Firstpage
378
Lastpage
382
Abstract
An effort was made to devise a new semiconductor switch which has the switching speed of the emitter-open switching, but only requires a standard base drive configuration (see figure 1 for my definition of standard base drive). The result of the research is a new semiconductor switch which achieves higher switching speed than emitter-open switching, lower forward voltage drop (particularly for very high current applications, involving hundreds of amperes), considerably lower cost, and uses more readily available parts. It is free from reverse biased secondary breakdown, a predominant mode of failure of many semiconductor switches.
Keywords
Bipolar transistors; Electric breakdown; Schottky diodes; Standards; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists conference, 1982 IEEE
Conference_Location
Cambridge, MA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1982.7072432
Filename
7072432
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