DocumentCode :
22437
Title :
A Millimeter-Scale Energy-Autonomous Sensor System With Stacked Battery and Solar Cells
Author :
Fojtik, Matthew ; Daeyeon Kim ; Chen, Gang ; Yu-Shiang Lin ; Fick, David ; Junsun Park ; Mingoo Seok ; Mao-Ter Chen ; Zhiyoong Foo ; Blaauw, D. ; Sylvester, Dennis
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
Volume :
48
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
801
Lastpage :
813
Abstract :
An 8.75 mm3 microsystem targeting temperature sensing achieves zero-net-energy operation using energy harvesting and ultra-low-power circuit techniques. A 200 nW sensor measures temperature with -1.6 °C/+3 °C accuracy at a rate of 10 samples/sec. A 28 pJ/cycle, 0.4 V, 72 kHz ARM Cortex-M3 microcontroller processes temperature data using a 3.3 fW leakage per bit SRAM. Two 1 mm2 solar cells and a thin-film Li battery power the microsystem through an integrated power management unit. The complete microsystem consumes 7.7 μ W when active and enters a 550 pW data-retentive standby mode between temperature measurements. The microsystem can process temperature data hourly for 5 years using only the initial energy stored in the battery. This lifetime is extended indefinitely using energy harvesting to recharge the battery, enabling energy-autonomous operation.
Keywords :
SRAM chips; electric sensing devices; energy harvesting; energy management systems; microcontrollers; microsensors; secondary cells; solar cells; temperature measurement; temperature sensors; thin film sensors; ARM Cortex-M3 microcontroller processing; Li; SRAM; data-retentive standby mode; energy harvesting; frequency 72 kHz; initial energy storage; integrated power management unit; microsystem temperature sensor; millimeter-scale energy-autonomous sensor system; power 200 nW; power 3.3 fW; power 550 pW; power 7.7 muW; solar cell; stacked battery; temperature -1.6 degC; temperature 3 degC; temperature measurement; thin-film Li battery power; time 5 year; ultralow-power circuit technique; voltage 0.4 V; zero-net-energy operation; Batteries; Clocks; Logic gates; Photovoltaic cells; Random access memory; Temperature measurement; Temperature sensors; CMOS memory integrated circuits; digital signal processors; photovoltaic power systems; transducers;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2233352
Filename :
6416956
Link To Document :
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