• DocumentCode
    2243760
  • Title

    Some issues of power MOSFETs

  • Author

    Chi, Min-hwa ; Hu, Chenming

  • Author_Institution
    University of California, Berkeley, California 94720
  • fYear
    1982
  • fDate
    14-17 June 1982
  • Firstpage
    392
  • Lastpage
    399
  • Abstract
    Several recent studies of power MOSFETs are discussed in this paper: (a) The second-breakdown of power MOSFETs is shown to be triggered by the turn-on of the parasitic bipolar transistor, (b) The I-V characteristics of power MOSFETs operating in reverse mode (such as when used as a synchronous rectifier) are studied, (c) A H5°-spreadingangle model for the calculation of epi-resistance is shown to be more accurate than any previously published model for linear source geometry. More importantly, this model has been extended to cellular source geometries.
  • Keywords
    Bipolar transistors; Electric breakdown; Geometry; MOSFET; Rectifiers; Resistance; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists conference, 1982 IEEE
  • Conference_Location
    Cambridge, MA, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1982.7072435
  • Filename
    7072435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243760