Title :
Some issues of power MOSFETs
Author :
Chi, Min-hwa ; Hu, Chenming
Author_Institution :
University of California, Berkeley, California 94720
Abstract :
Several recent studies of power MOSFETs are discussed in this paper: (a) The second-breakdown of power MOSFETs is shown to be triggered by the turn-on of the parasitic bipolar transistor, (b) The I-V characteristics of power MOSFETs operating in reverse mode (such as when used as a synchronous rectifier) are studied, (c) A H5°-spreadingangle model for the calculation of epi-resistance is shown to be more accurate than any previously published model for linear source geometry. More importantly, this model has been extended to cellular source geometries.
Keywords :
Bipolar transistors; Electric breakdown; Geometry; MOSFET; Rectifiers; Resistance; Semiconductor device modeling;
Conference_Titel :
Power Electronics Specialists conference, 1982 IEEE
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/PESC.1982.7072435
