• DocumentCode
    2243788
  • Title

    WNx/W as a low-resistance gate material and local interconnect

  • Author

    Galewski, C.J. ; Gadgil, P.N. ; Matthysse, L.D. ; Sans, C.A.

  • Author_Institution
    Div. of Thin Film, GENUS, Sunnyvale, CA, USA
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    88
  • Lastpage
    90
  • Abstract
    In this study we propose the use of an in-situ deposition of an interfacial WN/sub x/ film to enable the use of W as a low resistance gate and local interconnect layer. We have found that the interfacial WN/sub x/ layer greatly improves the adhesion and nucleation of the following W deposition. Furthermore, the interfacial WN/sub x/ stabilizes the W to Si interface, preventing any silicide formation during anneals up to 850/spl deg/C.
  • Keywords
    integrated circuit interconnections; plasma CVD coatings; tungsten; tungsten compounds; 850 C; PECVD; W-WN-Si; W/Si interface; adhesion; annealing; in-situ deposition; interfacial WN/sub x/ film; local interconnect; low-resistance gate; nucleation; silicide formation; Amorphous materials; Annealing; Conductivity; Crystallization; Metallization; Plasma chemistry; Plasma temperature; Transistors; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621069
  • Filename
    621069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2243788