Title :
WNx/W as a low-resistance gate material and local interconnect
Author :
Galewski, C.J. ; Gadgil, P.N. ; Matthysse, L.D. ; Sans, C.A.
Author_Institution :
Div. of Thin Film, GENUS, Sunnyvale, CA, USA
Abstract :
In this study we propose the use of an in-situ deposition of an interfacial WN/sub x/ film to enable the use of W as a low resistance gate and local interconnect layer. We have found that the interfacial WN/sub x/ layer greatly improves the adhesion and nucleation of the following W deposition. Furthermore, the interfacial WN/sub x/ stabilizes the W to Si interface, preventing any silicide formation during anneals up to 850/spl deg/C.
Keywords :
integrated circuit interconnections; plasma CVD coatings; tungsten; tungsten compounds; 850 C; PECVD; W-WN-Si; W/Si interface; adhesion; annealing; in-situ deposition; interfacial WN/sub x/ film; local interconnect; low-resistance gate; nucleation; silicide formation; Amorphous materials; Annealing; Conductivity; Crystallization; Metallization; Plasma chemistry; Plasma temperature; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621069
