DocumentCode :
2243826
Title :
Electron transport in nanoscale bipolar transistors
Author :
Parikh, Chetan D. ; Lundstrom, Mark S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2002
fDate :
2002
Firstpage :
103
Lastpage :
106
Abstract :
As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models, and solves these self-consistently with Poisson´s equation. The resulting data demonstrate the limitations of the drift-diffusion and the energy transport models. Directions for future work are proposed.
Keywords :
Poisson equation; bipolar transistors; carrier mobility; nanoelectronics; semiconductor device models; technology CAD (electronics); 1D electron transport simulators; CAD models; carrier transport models; drift-diffusion model; energy transport model; nanoBJT; nanoscale bipolar transistors; quasi-ballistic current transport; self-consistent Poisson equation solutions; transistor base widths; Art; Bipolar transistors; Boltzmann equation; Design automation; Distribution functions; Electron emission; Gallium arsenide; MOSFETs; Physics; Poisson equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
Type :
conf
DOI :
10.1109/NANO.2002.1032134
Filename :
1032134
Link To Document :
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