DocumentCode
2244101
Title
Planar aluminium multilevel interconnection formed by electrochemical anodizing technique
Author
Surganov, V. ; Mozalev, A.
Author_Institution
Dept. of Microelectron., Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
1997
fDate
16-19 March 1997
Firstpage
91
Lastpage
92
Abstract
This report describes a multilevel inter-connection technology based on selective electrochemical anodizing of aluminium and its alloys. In accordance with this technology, local areas into Al layer are transformed to insulating anodic alumina by low temperature electrochemical oxidation. Selective anodizing technique provides possibility to produce following components of planar multilevel inter-connections.
Keywords
aluminium; anodisation; electrochemistry; integrated circuit interconnections; integrated circuit metallisation; oxidation; Al; electrochemical anodization; insulating alumina; planar aluminium multilevel interconnection; selective oxidation; Aluminum; Conducting materials; Dielectric materials; Manufacturing processes; Metallization; Microelectronics; Planarization; Plasma applications; Plasma chemistry; Plasma materials processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621070
Filename
621070
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