Title :
Stability and Compensation Technique for a CMOS Amperometric Potentiostat Circuit for Redox Sensors
Author :
Hasan, S. M Rezaul
Author_Institution :
Center for Res. in Analog & VLSI Microsystem Design, Massey Univ., Auckland
Abstract :
The stability and compensation of a closed loop CMOS amperometric potentiostat circuit used in many electrochemical sensors is investigated in this paper. The redox sensing technique utilizes a mass-transport limited current through micro-electrodes submerged in an analyte assay which can be modeled as a current source in parallel with a fractal parasitic R-C impedance. Using a current amplifier topology, detailed circuit analysis and simulation indicates that the phase margin may degrade into instability due to the microelectrode parasitic impedance which contributes a relatively non-dominant pole. A suitable technique for the compensation of the potentiostat circuit is also discussed
Keywords :
CMOS integrated circuits; amperometric sensors; circuit simulation; detector circuits; microelectrodes; oxidation; reduction (chemical); CMOS amperometric potentiostat circuit; analyte assay; compensation technique; current amplifier topology; current source model; electrochemical sensors; fractal parasitic R-C impedance; mass-transport limited current; microelectrode parasitic impedance; nondominant pole; phase margin; redox sensors; stability technique; Amperometric sensors; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Circuit stability; Circuit topology; Fractals; Impedance; Semiconductor device modeling; Redox sensor; compensation; potentiostat; stability;
Conference_Titel :
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
1-4244-0387-1
DOI :
10.1109/APCCAS.2006.342181