• DocumentCode
    2244402
  • Title

    The effect of growth temperature on InAs quantum dots grown by MOCVD

  • Author

    Li, Tianhe ; Guo, Xin ; Wang, Qi ; Wang, Pengyu ; Jia, Zhigang ; Ren, Xiaomin ; Huang, Yongqing ; Cai, Shiwei

  • Author_Institution
    State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
  • fYear
    2011
  • fDate
    13-16 Nov. 2011
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×1010cm-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.
  • Keywords
    III-V semiconductors; MOCVD; crystals; indium compounds; semiconductor quantum dots; InAs; MOCVD; crystal faces; growth temperature effect; metal-organic chemical vapor deposition; quantum dots; wavelength 1240 nm; Abstracts; Gallium arsenide; MOCVD; AFM; InAs QDs; MOCVD; PL;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
  • Conference_Location
    Shanghai
  • ISSN
    2162-108X
  • Print_ISBN
    978-0-8194-8961-6
  • Type

    conf

  • DOI
    10.1117/12.917614
  • Filename
    6210710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2244402