DocumentCode :
2244402
Title :
The effect of growth temperature on InAs quantum dots grown by MOCVD
Author :
Li, Tianhe ; Guo, Xin ; Wang, Qi ; Wang, Pengyu ; Jia, Zhigang ; Ren, Xiaomin ; Huang, Yongqing ; Cai, Shiwei
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2011
fDate :
13-16 Nov. 2011
Firstpage :
1
Lastpage :
7
Abstract :
The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×1010cm-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.
Keywords :
III-V semiconductors; MOCVD; crystals; indium compounds; semiconductor quantum dots; InAs; MOCVD; crystal faces; growth temperature effect; metal-organic chemical vapor deposition; quantum dots; wavelength 1240 nm; Abstracts; Gallium arsenide; MOCVD; AFM; InAs QDs; MOCVD; PL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
ISSN :
2162-108X
Print_ISBN :
978-0-8194-8961-6
Type :
conf
DOI :
10.1117/12.917614
Filename :
6210710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2244402
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