Title :
Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD
Author :
Wang, Pengyu ; Wang, Qi ; Guo, Xin ; Jia, Zhigang ; Li, Tianhe ; Ren, Xiaomin ; Cai, Shiwei
Author_Institution :
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
Abstract :
We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn´t obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.
Keywords :
III-V semiconductors; MOCVD; boron; gallium arsenide; indium compounds; optical fabrication; semiconductor quantum dots; (B)InAs-GaAs; InGaAs; MOCVD; metalorganic chemical vapour deposition; quantum dots; strain-reducing layer; Abstracts; Gallium arsenide; Size measurement; Boron incorporation; PL spectra; compressive strain; morphology;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6
