Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Author

Wang, Pengyu ; Wang, Qi ; Guo, Xin ; Jia, Zhigang ; Li, Tianhe ; Ren, Xiaomin ; Cai, Shiwei

Author_Institution

State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2011

fDate

13-16 Nov. 2011

Firstpage

1

Lastpage

6

Abstract

We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn´t obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.

Keywords

III-V semiconductors; MOCVD; boron; gallium arsenide; indium compounds; optical fabrication; semiconductor quantum dots; (B)InAs-GaAs; InGaAs; MOCVD; metalorganic chemical vapour deposition; quantum dots; strain-reducing layer; Abstracts; Gallium arsenide; Size measurement; Boron incorporation; PL spectra; compressive strain; morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition, 2011. ACP. Asia

Conference_Location

Shanghai

ISSN

2162-108X

Print_ISBN

978-0-8194-8961-6

Type

conf

DOI

10.1117/12.917901

Filename

6210711