Title :
A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor
Author :
Andreani, Pietro ; Mattisson, Sven
Author_Institution :
Dept. of Appl. Electron., Lund Univ., Sweden
Abstract :
This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor
Keywords :
CMOS analogue integrated circuits; MOS capacitors; UHF integrated circuits; UHF oscillators; circuit tuning; phase noise; varactors; voltage-controlled oscillators; 0.6 micron; 1.8 GHz; 2.7 mA; CMOS; VCO; accumulation region; accumulation-mode MOS varactor; current consumption; depletion region; pMOS capacitor; phase noise; tuning range; Capacitance; Diodes; Frequency; MOS capacitors; MOS devices; MOSFETs; Phase noise; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.857093
