DocumentCode
2244532
Title
Temperature compensation design for a 2.4 GHz CMOS low noise amplifier
Author
Wu, Yue ; Shi, Chunlei ; Ismail, Mohammed ; Olsson, Håkan
Author_Institution
Radio Electron. Lab., R. Inst. of Technol., Stockholm, Sweden
Volume
1
fYear
2000
fDate
2000
Firstpage
323
Abstract
In this paper, a low noise amplifier suitable for wireless WCDMA systems is designed with AMS 0.35 μm CMOS process. A biasing circuit with temperature compensation is presented. The simulation result in Cadence shows that the LNA can achieve 12.7 dB power gain and 1.7 dB noise figure with 7 mW power consumption at 27°C. The gain and NF variations over -45°C to 85°C are less than 0.4 dB and 0.1 dB respectively
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; code division multiple access; compensation; land mobile radio; -45 to 85 degC; 0.35 micron; 1.7 dB; 12.7 dB; 2.4 GHz; 7 mW; AMS CMOS process; Cadence; LNA; biasing circuit; low noise amplifier; power consumption; power gain; temperature compensation design; wireless WCDMA systems; CMOS process; Circuit noise; Circuit simulation; Energy consumption; Gain; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857095
Filename
857095
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