Title :
Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 µm
Author :
Li, Hua ; Katz, Simeon ; Boehm, Gerhard ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Broad gain lasers attract much interest due to the practical gas sensing applications. A step well structure with double optical transitions is implemented in the active region of injectorless quantum-cascade lasers (QCLs) to achieve extended gain bandwidth. The step well is constructed by a “short period superlattice” which provides an equivalent GaInAlAs alloy quantum step well in each active module. The fabricated devices show an ultrabroadband gain spectrum of 480 cm-1 (4 μm) at room temperature in pulsed mode. The laser threshold current density is as low as 1.1 kA/cm2 which is the lowest among the broad gain QCLs emitting at similar wavelengths and the slope efficiency is 1.6 W/A at room temperature.
Keywords :
current density; gallium compounds; gas sensors; laser modes; quantum cascade lasers; semiconductor superlattices; GaInAlAs; broad gain injectorless quantum-cascade lasers; double optical transitions; equivalent alloy quantum step well; extended gain bandwidth; laser threshold current density; low threshold emitting; practical gas sensing applications; short period superlattice; temperature 293 K to 298 K; ultrabroadband gain spectrum; wavelength 8.6 mum; Abstracts; Nonhomogeneous media; Spot welding; gain bandwidth; injectorless; mid-infrared; quantum-cascade laser;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6