An investigation of differences in electron and hole confinement in InAs/InGaAsP quantum dash lasers

Author

Heck, S.C. ; Healy, S.B. ; Osborne, S. ; Williams, D.P. ; Fehse, R. ; Reilly, E. P O ; Lelarge, F. ; Poingt, F. ; Accard, A. ; Pommereau, F. ; Legouezigou, O. ; Dagens, B.

Author_Institution

Tyndall Nat. Inst., Cork

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We calculate that strain and confinement effects lead to similar conduction and valence density of states in InGaAsP quantum dashes. Room temperature threshold remains dominated by non-radiative recombination, as in 1.5 mum quantum well lasers.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; InAs-InGaAsP; conduction; electron confinement; hole confinement; nonradiative recombination; quantum dash lasers; quantum well lasers; room temperature threshold; strain effects; temperature 293 K to 298 K; valence density; wavelength 1.5 mum; Capacitive sensors; Charge carrier processes; Laser theory; Optical polarization; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Tellurium; Temperature; (160.6000) Materials; (250.5590) Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571808