In-band pumping of high-power Ho:YAG lasers by laser diodes at 1.9μm

Author

Scholle, K. ; Fuhrberg, P.

Author_Institution

LISA laser products OHG, Katlenburg

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We present for the first time a high-power Ho:YAG laser in-band pumped by a (AlGaIn)(AsSb) laser diode stack with 1910 nm centre wavelength. Using a single 60 mm long Ho:YAG rod in a simple and compact plane-plane resonator geometry a maximum laser output power of 40 W and a slope efficiency of 57% with respect to the absorbed pump power were obtained. A beam quality of M² < 4 was found.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; gallium compounds; holmium; laser beams; laser cavity resonators; optical materials; optical pumping; semiconductor lasers; solid lasers; yttrium compounds; AlGaIn-AsSb; YAG:Ho; efficiency 57 percent; high-power laser; in-band pumping; laser beam quality; laser diode stack; plane-plane resonator geometry; power 40 W; pump power; size 60 mm; slope efficiency; wavelength 1.9 mum; wavelength 1910 nm; Diode lasers; Heat pumps; Laser excitation; Laser radar; Mirrors; Optical pumping; Optical resonators; Power generation; Power lasers; Pump lasers; 140.0140; 140.3070; 140.3480; 140.3580; 140.5680;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571823