• DocumentCode
    22450
  • Title

    How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?

  • Author

    Biolek, Zdenek ; Biolek, Dalibor

  • Author_Institution
    Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
  • Volume
    61
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    491
  • Lastpage
    495
  • Abstract
    The hysteresis loop pinched at the origin of the v-i characteristic is the well-known fingerprint of the memristor excited by sinusoidal signal. This brief generalizes the present knowledge of the parameters of the pinched hysteresis loop for a periodical zero-dc driving signal described by an odd function of time. This brief concurrently brings new relationships between the parameter versus state map characteristics, the type of the excitation, and the type of loop pinching.
  • Keywords
    hysteresis; memristors; ideal memristor; parameter-versus-state map characteristics; periodical zero-DC driving signal; pinched hysteresis loop; sinusoidal signal; v-i characteristic; Circuits and systems; Fingerprint recognition; Hysteresis; Materials; Memristors; Polynomials; Constitutive relation; crossing type; memristance; memristor; parameter versus state map (PSM); pinched hysteresis loop (PHL); tangential pinching;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2014.2327303
  • Filename
    6822519