DocumentCode
22450
Title
How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?
Author
Biolek, Zdenek ; Biolek, Dalibor
Author_Institution
Dept. of Microelectron., Brno Univ. of Technol., Brno, Czech Republic
Volume
61
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
491
Lastpage
495
Abstract
The hysteresis loop pinched at the origin of the v-i characteristic is the well-known fingerprint of the memristor excited by sinusoidal signal. This brief generalizes the present knowledge of the parameters of the pinched hysteresis loop for a periodical zero-dc driving signal described by an odd function of time. This brief concurrently brings new relationships between the parameter versus state map characteristics, the type of the excitation, and the type of loop pinching.
Keywords
hysteresis; memristors; ideal memristor; parameter-versus-state map characteristics; periodical zero-DC driving signal; pinched hysteresis loop; sinusoidal signal; v-i characteristic; Circuits and systems; Fingerprint recognition; Hysteresis; Materials; Memristors; Polynomials; Constitutive relation; crossing type; memristance; memristor; parameter versus state map (PSM); pinched hysteresis loop (PHL); tangential pinching;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2014.2327303
Filename
6822519
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