DocumentCode
2245099
Title
A Comparison of High-Energy Electron and Cobalt-60 gamma-Ray Radiation Testing
Author
Casey, Megan C. ; Boutte, Alvin J. ; Campola, Michael J. ; Carts, Martin A. ; Wilcox, Edward P. ; Marshall, Cheryl J. ; Phan, Anthony M. ; Pellish, Jonathan A. ; Powell, Wesley A. ; Xapsos, Michael A.
Author_Institution
NASA Goddard Space Flight Center (GSFC), Greenbelt, MD, USA
fYear
2012
fDate
16-20 July 2012
Firstpage
1
Lastpage
5
Abstract
In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors.
Keywords
cobalt; junction gate field effect transistors; space vehicle electronics; cobalt-60 γ-ray radiation testing; cobalt-60 gamma-ray; discrete bipolar transistor; electron energy; high-energy electron; hybrid transistor; irradiating microelectronics; junction field effect transistor; spacecraft electronics; Bars; Degradation; Instruments; JFETs; NASA; Radiation effects; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location
Tucson, AZ
ISSN
2154-0519
Print_ISBN
978-1-4673-2730-5
Type
conf
DOI
10.1109/REDW.2012.6353724
Filename
6353724
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