DocumentCode
2245142
Title
"PICO-4" Single Event Effects Evaluation and Testing Facility Based on Wavelength Tunable Picosecond Laser
Author
Egorov, Andrey N. ; Chumakov, Alexander I. ; Mavritskiy, Oleg B. ; Pechenkin, Alexander A. ; Koltsov, Dmitriy O. ; Yanenko, Andrey V.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
2012
fDate
16-20 July 2012
Firstpage
1
Lastpage
4
Abstract
Technical characteristics of "PICO-4" SEE simulation facility utilizing a tunable picosecond laser source are presented. Its capabilities aimed on simulation of single event effects under space environment in Si, GaAs, SiGe etc. microelectronic devices are discussed.
Keywords
integrated circuits; radiation hardening (electronics); semiconductor lasers; test facilities; PICO-4 single event effect evaluation; SEE simulation facility; laser source; microelectronic devices; space environment; testing facility; wavelength tunable picosecond laser; Laser beams; Measurement by laser beam; Optical attenuators; Radiation effects; Semiconductor device measurement; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location
Tucson, AZ
ISSN
2154-0519
Print_ISBN
978-1-4673-2730-5
Type
conf
DOI
10.1109/REDW.2012.6353726
Filename
6353726
Link To Document