DocumentCode
2245203
Title
An epitaxial metal/semiconductor system for active plasmonic devices
Author
Nair, Hari P. ; Crook, Adam M. ; Bank, Seth R.
Author_Institution
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We present an epitaxial metal/semiconductor system for integrating plasmonic functionality into the heart of active III-V nanophotonic devices. We describe their optical properties, growth, and prototype application to plasmonic light emitting diodes.
Keywords
III-V semiconductors; arsenic alloys; erbium alloys; gallium arsenide; indium compounds; infrared spectra; light emitting diodes; nanoparticles; nanophotonics; photoluminescence; plasmonics; semiconductor growth; semiconductor quantum wells; ErAs-InGaAs-GaAs; active III-V nanophotonic devices; active plasmonic devices; epitaxial metal-semiconductor system; growth; optical properties; plasmonic functionality; plasmonic light emitting diodes; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Nanoparticles; Plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950821
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