DocumentCode :
2245203
Title :
An epitaxial metal/semiconductor system for active plasmonic devices
Author :
Nair, Hari P. ; Crook, Adam M. ; Bank, Seth R.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We present an epitaxial metal/semiconductor system for integrating plasmonic functionality into the heart of active III-V nanophotonic devices. We describe their optical properties, growth, and prototype application to plasmonic light emitting diodes.
Keywords :
III-V semiconductors; arsenic alloys; erbium alloys; gallium arsenide; indium compounds; infrared spectra; light emitting diodes; nanoparticles; nanophotonics; photoluminescence; plasmonics; semiconductor growth; semiconductor quantum wells; ErAs-InGaAs-GaAs; active III-V nanophotonic devices; active plasmonic devices; epitaxial metal-semiconductor system; growth; optical properties; plasmonic functionality; plasmonic light emitting diodes; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Nanoparticles; Plasmons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950821
Link To Document :
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