DocumentCode
2245416
Title
Plasmon nano-antenna enhanced light emission from InP MQW — Towards faster LEDs
Author
Arbel, David ; Berkovitch, Nikolai ; Nevet, Amir ; Peer, Andrea ; Orenstein, Meir
Author_Institution
Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
Arrays of plasmonic nano-antennas were fabricated on InGaAs/InP multi quantum well structure. Photo-luminescence enhancement of x9 was measured in correspondence with nano-antennas resonance, attributed to x25 increase in radiative recombination rate.
Keywords
III-V semiconductors; gallium arsenide; gold; indium compounds; light emitting diodes; nanofabrication; nanostructured materials; optical arrays; photoluminescence; plasmonics; radiative lifetimes; semiconductor quantum wells; surface plasmon resonance; Au; InGaAs-InP; LED; MQW; enhanced light emission; gold dipole nanoantennas; multiquantum well structure; photoluminescence; plasmon nanoantenna; radiative recombination lifetime; radiative recombination rate; Indium phosphide; Optical coupling; Plasmons; Quantum dots; Quantum well devices; Radiative recombination; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950830
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