• DocumentCode
    2245564
  • Title

    Self-aligned planar GaAs nanowires grown by MOCVD on GaAs (100) substrates

  • Author

    Fortuna, Seth A. ; Zeng, Xi ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The growth of self-aligned planar GaAs nanowires on GaAs (100) substrates is demonstrated using Au-catalyzed metalorganic chemical vapor deposition (MOCVD). The effect of growth temperature on nanowire orientation and the growth mechanism are discussed.
  • Keywords
    III-V semiconductors; MOCVD; catalysts; gallium arsenide; gold; nanowires; semiconductor growth; GaAs; MOCVD; growth mechanism; growth temperature; metalorganic chemical vapor deposition; nanowire orientation; self-aligned planar GaAs nanowires; Epitaxial growth; Gallium arsenide; Gold; MOCVD; Morphology; Nanowires; Scanning electron microscopy; Semiconductor laser arrays; Substrates; Temperature; (160.4236) Nanomaterials; (160.6000) Semiconductor materials;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4571847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2245564