DocumentCode
2245607
Title
Growth of GaAs whiskers by MBE on LPCVD Si(111) nanowire trunks
Author
Andrews, Aaron Maxwell ; Klang, P. ; Lugstein, Alois ; Schrambock, Matthias ; Steinmair, Mathias ; Hyun, Youn-Joo ; Bertagnolli, Emmerich ; Zauner, Christoph ; Unterrainer, K. ; Schrenk, Werner ; Strasser, Gottfried
Author_Institution
Center for Micro- & Nanostruct., Vienna Univ. of Technol., Vienna
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We present the heteroepitaxial growth of wurtzite GaAs nanowhiskers on Si(111)-nanowire trunks forming hierarchical star-like structures with a six-fold symmetry, grown in the [0001] direction perpendicular to the Si-NW {112} facets.
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; molecular beam epitaxial growth; optical materials; semiconductor growth; silicon; whiskers (crystal); GaAs; GaAs whiskers; LPCVD; MBE; Si; Si nanowire trunks; heteroepitaxial growth; CMOS technology; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; III-V semiconductor materials; Luminescence; Molecular beam epitaxial growth; Photonics; Substrates; (160.4236) Nanomaterials; (160.6000) Semiconductor materials;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571848
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