Title :
Micro-photoluminescence from a single InGaN-based nano-pillar fabricated by focused ion beam milling
Author :
Yen, H.H. ; Chiu, C.H. ; Yu, Peichen ; Kao, C.C. ; Lin, C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Yeh, W.Y.
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300 nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanostructured materials; semiconductor quantum wells; spectral line shift; GaN-InGaN; blue shift; emission spectrum; focused ion beam milling; microphotoluminescence; multiple quantum wells; nanopillar structure; strain relaxation; Capacitive sensors; Charge coupled devices; Gallium nitride; Ion beams; Lenses; Milling; Nanostructures; Photonics; Quantum well devices; Stimulated emission; 220.4241; 250.5230;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
