Title :
Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability
Author :
Kim, H.J. ; Lee, J.Y. ; Paik, K.W. ; Koh, K.W. ; Won, J.H. ; Choi, S.H. ; Lee, J. ; Moon, J.T. ; Park, Y.J.
Author_Institution :
MicroElectronic Packaging Lab. (MEPL), KAIST, Taejon, South Korea
Abstract :
Copper wire bonding is an alternative interconnection technology to serve as a viable, and cost saving alternative to gold wire bonding. Its excellent mechanical and electrical characteristics attract the high-speed, power management devices and fine-pitch applications. The copper wire bonding will be an important interconnection technology along with a flip chip technology. However, the growth of Cu/Al IMC (intermetallic compound) at the copper wire and aluminum interface can induce a mechanical failure and increase a potential contact resistance. In this study, the copper wire bonded chip samples were annealed at the temperature range from 150°C to 300°C for 2 to 250 hours, respectively. The formation of Cu/Al IMC was observed and the activation energy of Cu/Al IMC growth was obtained from an Arrhenius plot (In (growth rate) vs. 1/T). The obtained activation energy was 26 Kcal/mol. And the behavior of IMC growth was very sensitive to the annealing temperature
Keywords :
contact resistance; copper; failure (mechanical); fine-pitch technology; lead bonding; 150 to 300 degC; 2 to 250 h; Arrhenius plot; Cu-Al; activation energy; contact resistance; electrical characteristics; fine-pitch applications; interconnection technology; intermetallic compound; mechanical characteristics; mechanical failure; pad bondability; power management devices; wire bondability; Annealing; Bonding; Copper; Costs; Electric variables; Energy management; Flip chip; Gold; Intermetallic; Wire;
Conference_Titel :
Electronic Materials and Packaging, 2001. EMAP 2001. Advances in
Conference_Location :
Jeju Island
Print_ISBN :
0-7803-7157-7
DOI :
10.1109/EMAP.2001.983956
