Title :
Techniques and methods for the simulation of nanoscale ballistic MOSFETs
Author :
Iannaccone, G. ; Fiori, G. ; Curatola, G.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy
Abstract :
In this paper, we present the methods and the techniques we use for performing the simulation of nanoscale ballistic MOSFETs in bulk silicon, silicon on insulator, and silicon-germanium. Results for typical structures with channel length of 25 nm are presented.
Keywords :
MOSFET; ballistic transport; elemental semiconductors; germanium; nanoelectronics; semiconductor device models; silicon; silicon-on-insulator; SOI; Si-Ge; bulk Si; channel length; nanoscale ballistic MOSFETs; simulation; Electrons; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Poisson equations; Potential well; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032223
