Title :
Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs
Author :
lannaccone, G. ; Amirante, E.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy
Abstract :
We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.
Keywords :
MOSFET; doping profiles; semiconductor device models; deep submicron MOSFETs; doping fluctuations; quantum confinement; quantum modeling; random dopants; semiclassical modeling; threshold voltage dispersion; vertical directions; Charge carrier density; Doping profiles; Fluctuations; MOSFETs; Poisson equations; Potential well; Semiconductor process modeling; Silicon; Standards development; Threshold voltage;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032224
