Title :
Laser micro-machining and applications of glasses in optoelectronics
Author :
Su Lee, Yong ; Ho Kang, Won
Author_Institution :
Dept. of New Mater. Sci. & Eng., Dankook Univ., Choongnam, South Korea
Abstract :
For glass machining and laser-induced crystallization, a neodymium:yttrium aluminum garnet (Nd:YAG) laser was used. In the glass machining process, a laser drilled hole can be created by laser ablation with a transparent wavelength of 1064 nm. To create laser-induced silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions, the pulse width and frequency of the laser used were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570°C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3 O8 crystal phase appeared in the laser-irradiated Li 2O-Al2O3-SiO2 glass. For the present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment
Keywords :
crystallisation; heat treatment; laser ablation; laser beam machining; micro-optics; micromachining; nucleation; optical fabrication; optical glass; 1 h; 10 Hz; 1064 nm; 570 C; 8 ns; Ag; Ag ions; Ce; Ce ions; Li2O-Al2O3-SiO2; Li2O-Al2O3-SiO2 glass; LiAlSi3O8; LiAlSi3O8 crystal phase; Nd:YAG laser; YAG:Nd; YAl5O12:Nd; crystalline growth; glass machining; heat treatment; laser ablation; laser hole drilling; laser irradiation; laser micro-machining; laser-induced crystallization; laser-induced silver metallic particles; neodymium:yttrium aluminum garnet laser; nucleation seeds; optoelectronic glass applications; photosensitive glass; pulse frequency; pulse width; spontaneous crystallization; transparent wavelength; Aluminum; Crystallization; Garnets; Glass; Heat treatment; Laser ablation; Laser applications; Machining; Optical pulses; Silver;
Conference_Titel :
Electronic Materials and Packaging, 2001. EMAP 2001. Advances in
Conference_Location :
Jeju Island
Print_ISBN :
0-7803-7157-7
DOI :
10.1109/EMAP.2001.983965