Compact BJT/JFET PTAT

Author

Amon, Slavko ; Mozek, Matej ; Vrtacnik, Danilo ; Resnik, Drago ; Aljancic, Uros ; Cvar, Matjaz

Author_Institution

Fac. of Electr. Eng., Ljubljana Univ., Slovenia

fYear

2001

fDate

2001

Firstpage

96

Lastpage

102

Abstract

Research on a new compact BJT/JFET PTAT temperature sensor structure is reported. Equations describing sensor response are derived. The effects of important structure parameters are included. Measurements on fabricated test PTAT structures revealed reasonably good temperature response in a wide temperature range (-130°C to +100°C). At low temperatures (measured down to -200°C), considerable deviation from ideal PTAT response was detected. It is shown that deviation is due to the reduction of constant diode ideality factor n region, related to the free carriers freeze-out effect. JFET current generators, in spite of appreciable temperature dependence, do not include excessive nonlinearity

Keywords

bipolar transistors; junction gate field effect transistors; low-temperature techniques; semiconductor device testing; temperature measurement; temperature sensors; -130 to 100 C; -200 C; BJT/JFET PTAT temperature sensor; JFET current generators; constant diode ideality factor n region; fabricated test structures; free carriers freeze-out effect; low temperatures; nonlinearity; proportional to absolute temperature; response deviation; structure parameters; temperature dependence; temperature range; temperature response; temperature sensor response; Diodes; Equations; JFET circuits; Sensor phenomena and characterization; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.983966

Filename

983966