Title :
High temperature semiconductor sensor for the detection of fluorine
Author :
Moritz, Werner ; Fillipov, Vladimir ; Bartholomaus, L. ; Terentjev, Alexander ; Gabusjan, Tigran ; Vasiliev, Alexei ; Yakimov, Sergei
Author_Institution :
Inst. of Phys. Chem., Humboldt-Univ., Berlin, Germany
Abstract :
The possibility of high temperature measurements up to 350°C with a chemical semiconductor sensor for fluorine was proven using silicon carbide as the substrate. A structure SiC/SiO2/LaF 3/Pt leads to results comparable to the silicon based sensor. The influence of temperature on the sensor behaviour is smaller than expected but the increased desorption rate improves the limit of detection. An impulse method using the initial slope of the response curve was shown to be advantageous
Keywords :
desorption; fluorine; gas sensors; high-temperature techniques; 350 degC; F2; SiC; SiC-SiO2-LaF3-Pt; chemical semiconductor sensor; desorption rate; detection limit; fluorine detection; high temperature measurements; high temperature semiconductor sensor; impulse method; response curve; Capacitance; Chemical sensors; Kinetic theory; Lead compounds; Platinum; Sensor phenomena and characterization; Silicon carbide; Solid state circuits; Substrates; Temperature sensors;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635381
