DocumentCode :
2245977
Title :
Narrow bandgap semiconductor based THz-emitters
Author :
Wilke, Ingrid ; Sengupta, Suranjana ; Dutta, Partha S.
Author_Institution :
Dept. of Physios, Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
The emission of terahertz (THz)-radiation pulses from binary and ternary narrow bandgap semiconductors is discussed. GaxIn1-xAs:Fe is a THz-emitter material for time-domain THz systems with potentially ≈1mW of average THz-radiation power at MHz repetition rates.
Keywords :
gallium compounds; indium compounds; iron; microwave photonics; narrow band gap semiconductors; optical materials; photoconducting devices; terahertz wave devices; terahertz wave generation; time-domain analysis; GaxIn1-xAs:Fe; binary semiconductors; narrow bandgap semiconductor based photoconducting THz-emitters; terahertz-radiation pulses; ternary semiconductors; time-domain THz systems; Acceleration; Antennas; Crystals; Photonic band gap; Power lasers; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950853
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2245977
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