• DocumentCode
    2245977
  • Title

    Narrow bandgap semiconductor based THz-emitters

  • Author

    Wilke, Ingrid ; Sengupta, Suranjana ; Dutta, Partha S.

  • Author_Institution
    Dept. of Physios, Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The emission of terahertz (THz)-radiation pulses from binary and ternary narrow bandgap semiconductors is discussed. GaxIn1-xAs:Fe is a THz-emitter material for time-domain THz systems with potentially ≈1mW of average THz-radiation power at MHz repetition rates.
  • Keywords
    gallium compounds; indium compounds; iron; microwave photonics; narrow band gap semiconductors; optical materials; photoconducting devices; terahertz wave devices; terahertz wave generation; time-domain analysis; GaxIn1-xAs:Fe; binary semiconductors; narrow bandgap semiconductor based photoconducting THz-emitters; terahertz-radiation pulses; ternary semiconductors; time-domain THz systems; Acceleration; Antennas; Crystals; Photonic band gap; Power lasers; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2245977