Effect of network topology on nanocluster film transport

Author

Rendell, R.W. ; Ancona, M.G. ; Kruppa, W. ; Foos, E.E. ; Snow, A.W. ; Park, D. ; Boos, J.B.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2002

fDate

2002

Firstpage

239

Lastpage

242

Abstract

The effects of network topology on electron transport is studied using Monte Carlo simulations of tunnel junction networks with transport governed by Coulomb blockade. Both the threshold voltage shift and the nonlinearity of the I-V curves are sensitive to lateral fluctuations of the conduction paths due to random voids. The nonlinearity is found to be maximized for aspect ratios of the network of unity or larger and for random void networks with 50% horizontal connections. Comparisons are made with Au nanocluster I-V measurements.

Keywords

Coulomb blockade; Monte Carlo methods; current fluctuations; gold; metallic thin films; nanostructured materials; tunnelling; voids (solid); Au; Au nanocluster I-V measurements; Coulomb blockade; I-V curve nonlinearity; Monte Carlo simulations; conduction path fluctuations; electron transport; nanocluster film transport; network topology effect; random voids; spect ratios; threshold voltage shift; tunnel junction networks; Electrodes; Electrons; Gold; Nanoscale devices; Network topology; Snow; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Print_ISBN

0-7803-7538-6

Type

conf

DOI

10.1109/NANO.2002.1032237

Filename

1032237