DocumentCode
2246076
Title
Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics
Author
Kuo, Yue ; Lu, Jiang ; Liu, Peter C. ; Daby, F.M. ; Yen Tewg, Jun
Author_Institution
Thin Film Microelectron. Res. Lab., Texas A&M Univ., College Station, TX, USA
fYear
2002
fDate
2002
Firstpage
251
Lastpage
253
Abstract
The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditions. The interface layer properties do not influence the high k film´s leakage current but affect the dielectric constant drastically.
Keywords
annealing; dielectric thin films; hafnium; leakage currents; permittivity; silicon; sputter deposition; sputtered coatings; tantalum compounds; zirconium; 10 nm; 2 nm; Si; Si wafer; TaO:Hf,Zr; dielectric constant; doped metal oxide high k dielectrics; electrical properties; leakage current; nanometer thick interface layer; sputter deposition; Annealing; Dielectric thin films; Hafnium; High K dielectric materials; High-K gate dielectrics; Leakage current; Semiconductor films; Silicon; Temperature; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN
0-7803-7538-6
Type
conf
DOI
10.1109/NANO.2002.1032240
Filename
1032240
Link To Document