Title :
A self-aligned silicide technology with the Mo/Ti bilayer system
Author :
Kaplan, W. ; Mouroux, A. ; Zhang, S.L.
Author_Institution :
Ind. Microelectron. Centre, Kista, Sweden
Abstract :
In this work, the formation of TiSi/sub 2/ from Ti/Mo bilayers on both blanket and patterned poly-Si substrates during rapid thermal annealing (RTA) was first studied by means of electrical measurements on van der Pauw test structures. Then, ohmic contacts between the silicide and both p- and n-type Si, as well as electrical shorts between the gate and source/drain electrodes were investigated.
Keywords :
chemical interdiffusion; metallisation; molybdenum; rapid thermal annealing; titanium; Mo-Ti; Mo/Ti bilayer; SALICIDE; TiSi/sub 2/; electrical short; ohmic contact; polysilicon substrate; rapid thermal annealing; self-aligned silicide technology; sheet resistance; silicide formation; van der Pauw measurement; Electrical resistance measurement; Ion implantation; Metallization; Microelectronics; Semiconductor films; Silicides; Solid state circuits; Temperature; Testing; Very large scale integration;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621079
