Title :
Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots
Author :
Chen, Shen-De ; Tsai, Chiou-Yun ; Lee, Si-Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; phase separation; photoluminescence; scanning electron microscopy; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line shift; AFM image; InAs-GaAs; InAs/GaAs quantum dots; InGaAs; InGaAs cap layer; PL spectra shift; phase separation growth; photoluminescence spectra; self-assembly; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dots; Scanning electron microscopy; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032260
