A Low-Power Technique Based on Charge Injection and Current-Saving Methods for Match-Line Sensing in Content-Addressable Memories

Author

Zhang, Jianwei ; Ye, Yizheng ; Liu, Binda

Author_Institution

Microelectron. Center, Harbin Inst. of Technol.

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1293

Lastpage

1296

Abstract

Based on charge injection and current-saving methods, a novel technique is presented to achieve low power for match-line sensing in content-addressable memories (CAMs). The proposed technique eliminates the requirement for an additional large capacitance as in charge injection method, and delay element as in current-saving method. Simulation results show that, for a 2.06ns search under 1.2V 0.13mum CMOS process, the word circuit of the proposed 256-word times 144-bit TCAM consumes 0.33fJ/bit/search, which accounts for 36.7% that of charge injection and 47.1% that of current-saving

Keywords

CMOS integrated circuits; charge injection; content-addressable storage; low-power electronics; 0.13 micron; 1.2 V; 2.06 ns; CMOS process; charge injection; content-addressable memories; current-saving methods; low-power technique; match-line sensing; CADCAM; CMOS process; Cams; Capacitance; Circuit simulation; Computer aided manufacturing; Delay; Energy consumption; MIM capacitors; Multilevel systems; content-addressable memories; low-power; match line;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342400

Filename

4145637