The effect of ultrasonic power on bonding pad and IMD layers in ultrasonic wire bonding

Author

Jeon, Insu ; Chung, Qwanho ; Hong, Joonki ; Byun, Kwangyoo

Author_Institution

Semicond. Manuf. Div., PKG & Module R&D, Ichon, South Korea

fYear

2001

fDate

2001

Firstpage

235

Lastpage

242

Abstract

The effect of ultrasonic power on the reliability of bonding pad and IMD (intermetallic dielectric) layers has been investigated with numerical analysis and experimental survey. Such reliability can be characterized by maximum equivalent plastic strain in bonding pad and maximum von Mises stress in IMD layers. The whole process of ultrasonic wire bonding is simulated by the finite element method to study the characteristics of ultrasonic power. From the results of this study, we find that the ultrasonic power is closely related to the surface cracking on the bonding pad as well as the fracture of IMD layers

Keywords

circuit reliability; crazing; dielectric thin films; finite element analysis; fracture; lead bonding; packaging; plastic deformation; ultrasonic bonding; IMD layer fracture; IMD layers; bonding pad; finite element method; intermetallic dielectric layers; maximum equivalent plastic strain; maximum von Mises stress; numerical analysis; reliability; surface crack; ultrasonic power; ultrasonic wire bonding; Bonding; Capacitive sensors; Dielectrics; Finite element methods; Intermetallic; Numerical analysis; Plastics; Stress; Surface cracks; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.983991

Filename

983991