DocumentCode :
2246672
Title :
Organic Thin-Film Transistor from Solution-Processed Precursor Film
Author :
Hattori, Reiji
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka
fYear :
2007
fDate :
26-31 Aug. 2007
Firstpage :
1
Lastpage :
2
Abstract :
Small molecule, tetrabenzoporphyrin (BP), organic thin-film-transistor (OTFT) were fabricated by annealing its spin-coated precursor film at 205degC. The OTFT has a bottom contacted structure with Polystyrene passivation layer. The transfer characteristics of the TFT provide a mobility of 0.11 cm2 /(Vldrs) and an on/off ratio of more than 104 .
Keywords :
annealing; organic semiconductors; passivation; polymers; thin film transistors; OTFT; annealing; organic thin film transistor; polystyrene passivation layer; solution processed precursor film; spin coated precursor film; temperature 205 degC; tetrabenzoporphyrin; Annealing; Crystalline materials; Organic semiconductors; Organic thin film transistors; Passivation; Polymers; Semiconductor films; Semiconductor materials; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
Type :
conf
DOI :
10.1109/CLEOPR.2007.4391507
Filename :
4391507
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2246672
بازگشت