Title :
BiCMES and BiCMOD: bipolar-FET logic configurations for high speed applications
Author :
Chu, Daniel Y. ; Abdel-Motaleb, Ibrahim M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Abstract :
The performance of eight different BiCMOS logic configurations is discussed. The Z-type structure is found to be the most promising. The characteristics of Z-type inverters for Si MESFET and GaAlAs MODFET technologies are analyzed. The analysis shows that bipolar complementary structures, in general, can provide superior performance to other logic structures, and that BiCMES and BiCMOD structures can operate at higher speeds and lower power than BiCMOS
Keywords :
BIMOS integrated circuits; Schottky gate field effect transistors; high electron mobility transistors; integrated logic circuits; invertors; BiCMES; BiCMOD; BiCMOS logic configurations; GaAlAs; MESFET; MODFET technologies; Si; Z-type structure; bipolar complementary structures; bipolar-FET logic configurations; high speed applications; power; speeds; BiCMOS integrated circuits; Capacitance; FETs; HEMTs; Impedance; Inverters; Logic devices; MESFETs; MODFETs; MOSFETs;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69515
