Arsenic solubility in single crystalline cobalt disilicide

Author

Mangelinck, D. ; Cardenas, J. ; Svensson, B.G.

Author_Institution

Solid State Electron., R. Inst. of Technol., Stockholm, Sweden

fYear

1997

fDate

16-19 March 1997

Firstpage

120

Lastpage

121

Abstract

The interaction of silicon dopants with silicides is of crucial importance for integrated silicon technology. The presence of dopant may influence the silicide formation kinetics and its redistribution may change the electrical properties of the silicide-silicon structure. Implanted silicides have been also suggested as a dopant source for formation of shallow junctions. In both cases the solubility and the diffusion of dopants in silicide must be known to control the dopant behaviour. Cobalt disilicide (CoSi/sub 2/) is one of the most used silicides in device applications and the possibility of using implanted boron as diffusion source for formation of shallow junction has been demonstrated. In this contribution the solid solubility of arsenic in CoSi/sub 2/ has been investigated at temperatures between 650/spl deg/C and 950/spl deg/C.

Keywords

arsenic; cobalt compounds; elemental semiconductors; integrated circuit metallisation; semiconductor doping; silicon; solid solubility; 650 to 950 degC; Si:As-CoSi/sub 2/; dopant behaviour; dopant interaction; electrical properties; shallow junctions; silicide formation kinetics; solid solubility; Annealing; Boron; Cobalt; Crystallization; Inorganic materials; Silicides; Silicon; Solids; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621081

Filename

621081