Model for gas film damping in a silicon accelerometer

Author

Veijola, Timo ; Kuisma, Heikki ; Lahdenperä, Juha

Author_Institution

Circuit Theor. Lab., Helsinki Univ. of Technol., Espoo, Finland

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1097

Abstract

A mathematical model for the effective viscosity of a gas film in small air gaps between silicon-metal surfaces is presented. The model is based on the solution of the linearized Boltzmann equation and it is valid in viscous, transitional and molecular damping regions. The equation is solved with two different methods and a simple approximate equation for the effective viscosity is given to be used in practical design. With the model, a surface accommodation coefficient for the silicon surface is extracted by comparing accelerometer measurements and the mathematical model

Keywords

Boltzmann equation; accelerometers; damping; elemental semiconductors; frequency response; microsensors; numerical analysis; silicon; variational techniques; viscosity; Si; Si accelerometer; Si surface; Si-metal surfaces; accelerometer measurement; air gaps; effective viscosity; gas film damping; linearized Boltzmann equation; mathematical model; molecular damping regions; reflecting surfaces; surface accommodation coefficient; transitional damping regions; Accelerometers; Boltzmann equation; Damping; Fluid flow; Mathematical model; Rough surfaces; Semiconductor films; Silicon; Surface roughness; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635391

Filename

635391