Title :
Model for gas film damping in a silicon accelerometer
Author :
Veijola, Timo ; Kuisma, Heikki ; Lahdenperä, Juha
Author_Institution :
Circuit Theor. Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A mathematical model for the effective viscosity of a gas film in small air gaps between silicon-metal surfaces is presented. The model is based on the solution of the linearized Boltzmann equation and it is valid in viscous, transitional and molecular damping regions. The equation is solved with two different methods and a simple approximate equation for the effective viscosity is given to be used in practical design. With the model, a surface accommodation coefficient for the silicon surface is extracted by comparing accelerometer measurements and the mathematical model
Keywords :
Boltzmann equation; accelerometers; damping; elemental semiconductors; frequency response; microsensors; numerical analysis; silicon; variational techniques; viscosity; Si; Si accelerometer; Si surface; Si-metal surfaces; accelerometer measurement; air gaps; effective viscosity; gas film damping; linearized Boltzmann equation; mathematical model; molecular damping regions; reflecting surfaces; surface accommodation coefficient; transitional damping regions; Accelerometers; Boltzmann equation; Damping; Fluid flow; Mathematical model; Rough surfaces; Semiconductor films; Silicon; Surface roughness; Viscosity;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635391
