DocumentCode
2247071
Title
RF magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si
Author
Ramarotafika, H. ; Lempérière, G.
Author_Institution
Lab. des Plasmas et des Couches Minces, IMN, Nantes, France
fYear
1997
fDate
16-19 March 1997
Firstpage
122
Lastpage
123
Abstract
Copper is a promising interconnection metal for future VLSI circuits due to its low resistivity and its resistance to electromigration. The aim of this work is to investigate the performance of 100 nm thick WTi and WTi-N films as diffusion barriers between Cu and Si. The barrier films were deposited by RF magnetron sputtering.
Keywords
VLSI; copper; diffusion barriers; electrical resistivity; electromigration; elemental semiconductors; integrated circuit interconnections; integrated circuit metallisation; silicon; sputter deposition; sputtered coatings; tungsten compounds; 100 nm; Cu-WTi-Si; Cu-WTiN-Si; RF magnetron sputtering; VLSI circuits; diffusion barriers; electromigration; interconnection metal; resistivity; Argon; Backscatter; Copper; Inorganic materials; Rapid thermal annealing; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621082
Filename
621082
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