Title :
RF magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si
Author :
Ramarotafika, H. ; Lempérière, G.
Author_Institution :
Lab. des Plasmas et des Couches Minces, IMN, Nantes, France
Abstract :
Copper is a promising interconnection metal for future VLSI circuits due to its low resistivity and its resistance to electromigration. The aim of this work is to investigate the performance of 100 nm thick WTi and WTi-N films as diffusion barriers between Cu and Si. The barrier films were deposited by RF magnetron sputtering.
Keywords :
VLSI; copper; diffusion barriers; electrical resistivity; electromigration; elemental semiconductors; integrated circuit interconnections; integrated circuit metallisation; silicon; sputter deposition; sputtered coatings; tungsten compounds; 100 nm; Cu-WTi-Si; Cu-WTiN-Si; RF magnetron sputtering; VLSI circuits; diffusion barriers; electromigration; interconnection metal; resistivity; Argon; Backscatter; Copper; Inorganic materials; Rapid thermal annealing; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Tin;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621082
