Title :
Titanium monophosphide (TiP) layers as diffusion barriers
Author :
Leutenecker, R. ; Froschle, B. ; Ramm, P.
Author_Institution :
Fraunhofer Inst. for Solid State Phys., Munich, Germany
Abstract :
Summary form only given. Usually, diffusion barrier layers are fabricated of titanium nitride, deposited either by sputtering or by CVD. We developed a rapid thermal-CVD process with the classical precursor combination TiCl/sub 4//NH/sub 3/ for temperatures /spl les/450/spl deg/C. The chlorine content still present in the as-deposited coatings is reduced below a critical threshold of 2 at% by a subsequent in-situ annealing step in NH/sub 3/. Such barrier layers were successfully applied in test circuits.
Keywords :
annealing; chemical vapour deposition; diffusion barriers; integrated circuit metallisation; integrated circuit testing; rapid thermal processing; 0 to 450 degC; IC metallisation; TiP; critical threshold; diffusion barriers; in-situ annealing step; precursor combination; rapid thermal-CVD process; test circuits; Circuit testing; Coatings; Hydrogen; Rapid thermal annealing; Rapid thermal processing; Solid state circuits; Sputtering; Temperature;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621083
