DocumentCode
2247494
Title
Dynamics of photo-excited carriers in gallium nitride under subpicosecond laser pulse excitation
Author
Rudin, S. ; Bellotti, E. ; Garrett, G.A. ; Wraback, M.
Author_Institution
U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
3
Abstract
We present a study of subpicosecond kinetics of photo-excited carriers in bulk gallium nitride. The theoretical results are compared with the experimental results of the time-resolved photoluminescence induced by a 100-femtosecond pulse.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; laser beams; photoexcitation; photoluminescence; wide band gap semiconductors; photo excited carrier; subpicosecond laser pulse excitation; time 100 fs; time resolved photoluminescence; Charge carrier processes; Gallium nitride; Luminescence; Mathematical model; Optical pumping; Phonons; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950915
Link To Document