• DocumentCode
    2247494
  • Title

    Dynamics of photo-excited carriers in gallium nitride under subpicosecond laser pulse excitation

  • Author

    Rudin, S. ; Bellotti, E. ; Garrett, G.A. ; Wraback, M.

  • Author_Institution
    U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present a study of subpicosecond kinetics of photo-excited carriers in bulk gallium nitride. The theoretical results are compared with the experimental results of the time-resolved photoluminescence induced by a 100-femtosecond pulse.
  • Keywords
    III-V semiconductors; gallium compounds; high-speed optical techniques; laser beams; photoexcitation; photoluminescence; wide band gap semiconductors; photo excited carrier; subpicosecond laser pulse excitation; time 100 fs; time resolved photoluminescence; Charge carrier processes; Gallium nitride; Luminescence; Mathematical model; Optical pumping; Phonons; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950915