Parallel-resonator HF micromechanical bandpass filters

Author

Clark, John R. ; Bannon, Frank D., III ; Wong, Ark-Chew ; Nguyen, Clark T C

Author_Institution

Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1161

Abstract

High frequency, fourth-order, micromechanical bandpass filters, with tunable frequency and bandwidth, and filter Q´s in the thousands, are demonstrated in a polysilicon surface micromachining technology. These filters utilize a parallel-resonator architecture, in which properly phased outputs from two or more micromechanical resonators are combined to yield a desired filter spectrum. Design formulas are given for Butterworth, Chebyshev, and Bessel filters, and each of these filter types are demonstrated with center frequencies close to 14.5 MHz and filter Q´s ranging from 830 to 1600

Keywords

Butterworth filters; Chebyshev filters; Q-factor; band-pass filters; elemental semiconductors; frequency response; micromachining; micromechanical resonators; resonator filters; silicon; 14.5 MHz; Bessel filters; Butterworth filter; Chebyshev filter; Si; center frequency; design formulas; filter Q; fourth-order micromechanical bandpass filters; micromechanical resonators; parallel-resonator HF micromechanical bandpass filters; parallel-resonator architecture; phased outputs; polysilicon surface micromachining technology; tunable bandwidth; tunable frequency; Band pass filters; Bandwidth; Circuits; Electrodes; Frequency; Hafnium; Micromechanical devices; Resonator filters; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635411

Filename

635411